No. 8

Abstracts. No. 8, 2022 year
 
ABSTRACTS
Kolmogorova S.S., Biryukov S.B., Kolmogorov A.S., Baranov D.S. (e-mail: ss.kolmogorova@mail.ru)
Multi-electrode disk sensor performance analysis and assessment of its application as part of a data acquisition and processing platform

Electromagnetic induction sensors have long been used in many practical applications where non-contact interaction with an electrically conductive material is required. The paper presents the structural and mathematical models of a disk electric field strength sensor. Using methods of calculating electrostatic fields, an electric induction disk sensor of radius R with sensing elements in the form of circles of radius r is investigated, and its error caused by field inhomogeneity is evaluated. It is shown that the maximum of this error, depending on the size of the sensitive elements, can be less than 3 % at distances from the field source less than R, which allows to design a qualitatively better sensor used in various measuring systems of wide application. The analysis of variance calculation of the obtained values was 2.32 % of the influence of the technique on the obtained observation results, which is within the permissible values of the variability of the measurement results. During simulation modeling of realization of the distributed data collection and processing task in a decentralized cloud information-measuring system, the application of new forms of sensors as IoT-elements was realized. Adaptive processing algorithm, realizes reconstruction of the scanned data structure from the distributed sensors in the monitoring area in real time, providing continuous dynamic updating of information and prediction of electromagnetic field parameters.

Keywords: electrometry, electromagnetic field strength, measuring instruments, electromagnetic field sensors, disk sensor, error from field inhomogeneity, measurement process automation, measuring signal, Internet of things, security warning.

Nasriddinov S.S., Mannanov M.I., Tursunmetova Z.A., Esbergenov D.M., ayitov Z.T. (e-mail: sfera3110@mail.ru)
Temperature measurement device

This paper presents a device for measuring temperature. It is shown that highly compensated n-type silicon with a resistivity of 104...105 Ω cm doped with Cu impurities is the most suitable temperature sensor for the device. The electrical circuit of the device is divided into three parts. The first part, the microcontroller converts the voltage signal into digital and transmits it to the graphic screen. The second part, converting the resistance of the thermistor to voltage. Third part, display.

Keywords: temperature, device, resistivity, digital thermometers, microcontroller, doping, silicon.

Yashin A.Ya., Vedenin A.N., Yashin Ya.I. (e-mail: yashin@scietegra.com)
Determination of cancer markers by liquid chromatographs with different detectors

Oncological diseases (cancer) are the second cause of death of the population in different countries after cardiovascular diseases. The most important thing in these diseases is early diagnosis. The earlier cancer is detected, the more successful the treatment and about 90 % success rate. In recent years, interest has increased in the determination of cancer markers by HPLC with different detection systems. To detect new markers, the latest achievements of metabolomics, proteomics, peptidomics, lipidomics, and other omics are used. The short review contains an extensive well-chosen bibliography.

Keywords: markers, liquid chromatography, detectors, cancer, metabolomics, compound profile, early diagnosis.

Pirog V.P., Kuznetsov B.F. (e-mail: kuznetsovbf@gmail.com)
Stages of Development of Complexes of Software and Hardware Facilities of OKBA for APCS of Chemical and Petrochemical Productions

In recent years, a new direction in the development of automated process control systems has been clearly defined. It is associated with the appearance on the market of microprocessor-based software and hardware (PTS) automation with a distributed (decentralized) architecture.

Keywords: software and hardware complex, software, operator-technologist workplace.

Sleptsov V.V., Dinh Ba Phuong, Pham Thi Hoa, Mostovskoy M.V. (e-mail: sleptsov@mirea.ru)
Reducing the influence of wind disturbances on the operation of quadcopters by improving their information-measuring and control systems

The article considers the possibility of reducing the influence of wind disturbances on the operation of quadcopters (QC). A feature of the work is the development of a mathematical model of the IMS QC with a corrective device. The type and parameters of controllers of quadcopters altitude coordinate control systems are determined.

Keywords: quadcopter, corrective device, parameter sensors, technical optimum.

Shchepetov A.G., Shimereva L.V. (e-mail: a-shchepetov@mail.ru)
About the Vyshnegradsky diagram

Diagrams are proposed that make it possible to demonstrate and investigate the dependence of the indicators of the dynamic accuracy of the measuring device of the third order on the physical parameters of the device.

Keywords: Vyshnegradsky diagram, dynamic accuracy indicators.

Zikrillaev N.F., Shoabdurakhimova M.M., Ayupov K.S., Isamov S.B., Vakhobov K.I. (e-mail: nurullo@tdtu.uz)
Control of electroactive concentrations of impurity atoms in silicon

An analysis of the obtained results showed that a change in the concentration of impurity boron atoms in the range NB = 1,4 ⋅ 10143,1 ⋅ 1016 m3 leads to an increase in the concentration of electroactive manganese atoms by two orders. Under the same conditions, diffusion of impurity manganese atoms was carried out in silicon with n-type conductivity, in which the concentration of phosphorus atoms was in the range NP = 2,6 ⋅ 10132,6 ⋅ 1015 m3 and at the same time, the electroactive concentration of impurity manganese atoms practically did not change. The value of the concentration of electroactive manganese atoms in silicon was two orders of magnitude less than its maximum solubility. It has been found that the concentration of electroactive impurity atoms with deep levels depends significantly on the type and concentration of initial impurities in silicon. It is shown that impurity atoms with deep energy levels actively interact not only with the main atoms of silicon and initial impurities, but also interact with other uncontrolled impurities and defects in silicon.

Keywords: silicon, manganese, electroactive concentration, impurity, deep level, band gap, phosphorus, boron, p-type, n-type, solubility, diffusion.

ronyakin V.I., Skripka V.L. (e-mail: vip-u@yandex.ru)
Increasing the phasochronometric potential measurement method

This article considers the issue of improving the methods of measuring and interpreting chronograms that are invariant to changes in the speed of movement, and reducing the influence of the dispersion of the measured value on the accuracy of the result obtained, as well as the prospects for improving the technical diagnostics of mechanical engineering products on its basis.

Keywords: phasechronometry, time intervals, chronogram, diagnostics, processing of measurement information.

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